Spin Transfer Technologies, developer of Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), delivered Wednesday samples of fully functional ST-MRAM devices to multiple customers in North America and Asia. The sample devices utilize 80nm perpendicular magnetic tunnel junctions (MTJs), the latest generation of MRAM technology.
The company is delivering these devices on evaluation boards, so customers can apply patterns to the devices to assess their functionality and determine their suitability for embedding in their own products for non-volatile memory applications.
Target applications for STT’s MRAM technology include storage products, mobile devices, microcontrollers, and a multitude of low-energy semiconductor products for the internet-of-things (IoT) market.
Following shipping of samples, STT first aims to partner with customers to co-develop devices to be embedded in their products. In parallel STT will continue work to refine and optimize its stand-alone devices, including by enhancing bit densities and performance characteristics.
STT’s patented OST-MRAM has the potential to replace major segments of the market for flash, SRAM and DRAM semiconductors in applications such as mobile products, automotive, Internet of Things (IoT) and data storage. STT is simultaneously focused on developing state-of-the-art magnetics technologies along with CMOS circuits that work with existing CMOS processes.
Compared with conventional spin transfer MRAM approaches, the STT OST-MRAM devices offer advantages in speed, power efficiency, cost, reliability and scalability. STT’s ability to combine the magnetics with proven CMOS demonstrates the capability of the technology to operate in memory arrays with existing process standards and move into high-volume production.
“We are on track and executing to STT’s product roll-out timeline. Our priority is shipping fully functional, reliable perpendicular ST-MRAM devices, and we have achieved that with these samples,” said Barry Hoberman, CEO of STT. “We believe the samples will demonstrate to our customers the advantages provided by our ST-MRAMS in terms of low-write energy, byte addressability and easy process integration, providing an excellent alternative to embedded flash for many applications.”
In September Spin Transfer announced that it has fabricated perpendicular MRAM magnetic tunnel junctions (MTJs) as small as 20nm — among the smallest MTJs reported — at its development fab at the company’s Silicon Valley headquarters.
The MTJ is the primary component of an MRAM memory cell and is the core technology of an MRAM device.
STT has had working ST-MRAM memory chips internally for some time, and based on requests from certain major semiconductor and systems companies, the company is now preparing to deliver fully functional samples to select customers.
STT has moved its MRAM technology from R&D to commercialization largely on the strength of development done at its magnetics R&D fab, located at the company’s headquarters in Fremont, California. This R&D fab includes latest process and analysis equipment, enabling the company to compress engineering development cycles to ten days that otherwise would have taken several months.